BLC6G20LS-110, BLC6G20-110 Datasheet - NXP

BLC6G20LS-110 UHF power LDMOS transistor

110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation f (MHz) CW GSM EDGE 2-carrier W-CDMA VDS (V) PL (W) 100 48 (AV) 25 .

BLC6G20LS-110 Features

* s Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 950 mA: x Output power = 25 W (AV) x Gain = 18 dB x Efﬁciency = 32 % x IMD3 =

* 37 dBc x ACPR =

* 40 dBc s Easy power control s Integrated ESD protection s Excellent r

BLC6G20-110_PhilipsSemiconductors.pdf