Description
75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
72 (%) 1.5
38.5
62.5
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).Therefore care should
Features
- s Typical GSM EDGE performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 550 mA: x Output power = 29.5 W (AV) x Gain = 19 dB x Efficiency = 38.5 % x ACPR400 =.
- 62.5 dBc x ACPR600 =.
- 72 dBc x EVMrms = 1.5 % s Easy power control s Integrated ESD protection s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (1800 MHz to 2000 MHz) s Internally matched for ease of use
Philips Semiconductors
BL.