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BLC6G22LS-100 Datasheet UHF power LDMOS transistor

Manufacturer: NXP Semiconductors

Download the BLC6G22LS-100 datasheet PDF. This datasheet also includes the BLC6G22-100 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (BLC6G22-100_PhilipsSemiconductors.pdf) that lists specifications for multiple related part numbers.

General Description

100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.

Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) (W) 25 Gp (dB) 18 ηD (%) 32 IMD3 (dBc) −37 [1] ACPR (dBc) −40 [1] Test signal: 3GPP;

Overview

www.DataSheet4U.com BLC6G22-100; BLC6G22LS-100 UHF power LDMOS transistor Rev.

01 — 30 January 2006 Objective data sheet 1.

Product profile 1.

Key Features

  • s Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: x Output power = 25 W (AV) x Gain = 18 dB x Efficiency = 32 % x IMD3 =.
  • 37 dBc x ACPR =.
  • 40 dBc s Easy power control s Integrated ESD protection s Excellent ruggedness s High efficiency s Excellent thermal stability s Designed for broadband operation (2000 MHz to 2200 MHz) s Internally matched for ease of use Philips Semiconductors BLC6G22-100; BLC6G22LS-.

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