BLC6G22LS-130, BLC6G22-130 Datasheet - NXP

BLC6G22LS-130 UHF power LDMOS transistor

130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 28 PL(AV) Gp (.

BLC6G22LS-130 Features

* s Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: x Output power = 30 W (AV) x Gain = 16 dB x Efﬁciency = 31 % x IMD3 =

* 37 dBc x ACPR =

* 40 dBc s Easy power control s Integrated ESD protection s Excellent r

BLC6G22-130_PhilipsSemiconductors.pdf