BLC6G22LS-130, BLC6G22-130 - UHF power LDMOS transistor

NXP

BLC6G22LS-130 Datasheet Preview — This datasheet PDF includes multiple part numbers: BLC6G22LS-130, BLC6G22-130. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	BLC6G22LS-130, BLC6G22-130
Manufacturer	NXP ↗
File Size	87.91 KB
Description	UHF power LDMOS transistor
Datasheet	BLC6G22-130_PhilipsSemiconductors.pdf
Note	This datasheet PDF includes multiple part numbers: BLC6G22LS-130, BLC6G22-130. Please refer to the document for exact specifications by model.

BLC6G22LS-130 Product details

Description

130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. 37 [1] 40 [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz

Features

s Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: x Output power = 30 W (AV) x Gain = 16 dB x Efﬁciency = 31 % x IMD3 =.
37 dBc x ACPR =.
40 dBc s Easy power control s Integrated ESD protection s Excellent ruggedness s High efﬁciency s Excellent thermal stability s Designed for broadband operation (2000 MHz to 2200 MHz) s Internally matched for ease of use www. DataSheet4U. com Philips Semiconductors BL.

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Published: Aug 17, 2007 |