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BLC6G22LS-130 Datasheet, NXP

BLC6G22LS-130 transistor equivalent, uhf power ldmos transistor.

BLC6G22LS-130 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 87.91KB)

BLC6G22LS-130 Datasheet
BLC6G22LS-130
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 87.91KB)

BLC6G22LS-130 Datasheet

Features and benefits

s Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: x Output power = 30 W (AV) x Gain = 16 dB x.

Application

at frequencies from 2000 MHz to 2200 MHz. Table 1: Typical performance RF performance at Tcase = 25 °C in a common sourc.

Description

130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA .

Image gallery

BLC6G22LS-130 Page 1 BLC6G22LS-130 Page 2 BLC6G22LS-130 Page 3

TAGS

BLC6G22LS-130
UHF
power
LDMOS
transistor
NXP

Manufacturer


NXP (https://www.nxp.com/)

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