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BLF246B Datasheet, NXP

BLF246B transistor equivalent, vhf push-pull power mos transistor.

BLF246B Avg. rating / M : 1.0 rating-12

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BLF246B Datasheet

Features and benefits


* High power gain
* Easy power control
* Good thermal stability
* Gold metallization ensures excellent reliability. APPLICATIONS Large signal applications.

Application

Large signal applications in the VHF frequency range. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push.

Description

Silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap. All leads are isolated from the flange. PINNING - SOT161A PIN 1 2 3 4 5 6 7 8 DESCRIPTION source sour.

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BLF246B Page 1 BLF246B Page 2 BLF246B Page 3

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