BLF522 transistor equivalent, uhf power mos transistor.
* High power gain
* Easy power control
* Gold metallization
* Good thermal stability
* Withstands full load mismatch
* Designed for broadband oper.
in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All .
Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolat.
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