BLF542 Datasheet - NXP

UHF power MOS transistor

BLF542 General Description

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange. PINNING - SOT171 PIN 1 2 3 4 5 6 D.

BLF542 Datasheet (101.70 KB)

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BLF542

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NXP ↗

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101.70 KB

Description:

Uhf power mos transistor.
DISCRETE SEMICONDUCTORS DATA SHEET BLF542 UHF power MOS transistor Product speciﬁcation October 1992 Philips Semiconductors Product speciﬁcation .

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BLF542 UHF power MOS transistor NXP

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BLF542 General Description

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