BLF6G20-180P Datasheet Uhf Power Ldmos Transistor

Manufacturer: NXP Semiconductors

Overview: www.DataSheet4U.com BLF6G20-180P UHF power LDMOS transistor Rev. 01 — 19 April 2006 Objective data sheet 1. Product proﬁle 1.

Datasheet Details

Part number	BLF6G20-180P
Manufacturer	NXP Semiconductors
File Size	84.33 KB
Description	UHF power LDMOS transistor
Datasheet	BLF6G20-180P_PhilipsSemiconductors.pdf

180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Table 1: Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Mode of operation 2-carrier W-CDMA [1] f (MHz) 1805 to 1880 VDS (V) 32 PL(AV) (W) 50 Gp (dB) 17.5 ηD (%) 27.5 ACPR (dBc) −35[1] Test signal: 3GPP;

I Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a supply voltage of 32 V and an IDq of 1600 mA: N Average output power = 50 W N Power gain = 17.5 dB (typ) N Efﬁciency = 27.5 % N ACPR =.
35 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (1800 MHz to 2000 MHz) I Internally matched for ease of use 1.3.

Brand Logo	Part Number	Description	Manufacturer
	BLF6G20-180PN	Power LDMOS transistor	NXP Semiconductors
	BLF6G20-180RN	Power LDMOS transistor	Ampleon

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