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BLF6G20-180P Datasheet

UHF power LDMOS transistor

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BLF6G20-180P
UHF power LDMOS transistor
Rev. 01 — 19 April 2006
Objective data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
Table 1: Typical performance
RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
Mode of operation
f
VDS PL(AV) Gp
ηD
(MHz)
(V) (W) (dB) (%)
2-carrier W-CDMA
1805 to 1880
32 50 17.5 27.5
ACPR
(dBc)
35[1]
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I Typical 2-carrier W-CDMA performance at frequencies of 1805 MHz and 1880 MHz, a
supply voltage of 32 V and an IDq of 1600 mA:
N Average output power = 50 W
N Power gain = 17.5 dB (typ)
N Efficiency = 27.5 %
N ACPR = 35 dBc
I Easy power control
I Integrated ESD protection
I Excellent ruggedness
I High efficiency
I Excellent thermal stability
I Designed for broadband operation (1800 MHz to 2000 MHz)
I Internally matched for ease of use
1.3 Applications
I RF power amplifiers for W-CDMA base stations and multi carrier applications in the
1800 MHz to 2000 MHz frequency range.


NXP Semiconductors Electronic Components Datasheet

BLF6G20-180P Datasheet

UHF power LDMOS transistor

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Philips Semiconductors
BLF6G20-180P
UHF power LDMOS transistor
2. Pinning information
Table 2:
Pin
1
2
3
4
5
Pinning
Description
drain1
drain2
gate1
gate2
source
[1] Connected to flange
3. Ordering information
Simplified outline
12
Symbol
<tbd>
5
34
[1]
Table 3: Ordering information
Type number Package
Name Description
BLF6G20-180P -
flanged balanced LDMOST ceramic package; 2
mounting holes; 4 leads
Version
SOT539A
4. Limiting values
Table 4: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 65 V
0.5 +13 V
- <tbd> A
65 +150 °C
- 225 °C
BLF6G20-180P_1
Objective data sheet
Rev. 01 — 19 April 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
2 of 8


Part Number BLF6G20-180P
Description UHF power LDMOS transistor
Maker NXP
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BLF6G20-180P Datasheet PDF






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