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BLF6G22LS-180RN, BLF6G22-180RN Datasheet - NXP

BLF6G22LS-180RN Power LDMOS Transistor

180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 VDS (V) 30 PL(AV) (W) 40 Gp.

BLF6G22LS-180RN Features

* I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 16.0 dB N Efficiency = 25 % N IMD3 =

* 38 dBc N ACPR =

* 42 dBc I Easy power control I Integrated ESD protection I

BLF6G22-180RN_PhilipsSemiconductors.pdf

This datasheet PDF includes multiple part numbers: BLF6G22LS-180RN, BLF6G22-180RN. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

BLF6G22LS-180RN, BLF6G22-180RN

Manufacturer:

NXP ↗

File Size:

135.96 KB

Description:

Power ldmos transistor.

Note:

This datasheet PDF includes multiple part numbers: BLF6G22LS-180RN, BLF6G22-180RN.
Please refer to the document for exact specifications by model.

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TAGS

BLF6G22LS-180RN BLF6G22-180RN Power LDMOS Transistor NXP

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