Datasheet Summary
..
BLF6G22-180RN; BLF6G22LS-180RN
Power LDMOS transistor
Rev. 01
- 20 November 2008 Product data sheet
1. Product profile
1.1 General description
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA
[1] f (MHz) 2110 to 2170
VDS (V) 30
PL(AV) (W) 40
Gp (dB) 16.0
ηD (%) 25
IMD3 (dBc)
- 38[1]
ACPR (dBc)
- 42[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz.
CAUTION This device is sensitive to ElectroStatic...