BLF6G22-180RN datasheet by NXP Semiconductors.
| Part number | BLF6G22-180RN |
|---|---|
| Datasheet | BLF6G22-180RN_PhilipsSemiconductors.pdf |
| File Size | 135.96 KB |
| Manufacturer | NXP Semiconductors |
| Description | Power LDMOS Transistor |
|
|
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. PAR = 7 dB at 0.01 % probability on CCDF per carrier;.
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