BLF6G22LS-180RN datasheet by NXP Semiconductors.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BLF6G22LS-180RN |
|---|---|
| Datasheet | BLF6G22LS-180RN BLF6G22-180RN Datasheet (PDF) |
| File Size | 135.96 KB |
| Manufacturer | NXP Semiconductors |
| Description | Power LDMOS Transistor |
|
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180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. PAR = 7 dB at 0.01 % probability on CCDF per carrier;.
View all NXP Semiconductors datasheets
| Part Number | Description |
|---|---|
| BLF6G22-180RN | Power LDMOS Transistor |
| BLF6G20-180P | UHF power LDMOS transistor |
| BLF6G20-180RN | Power LDMOS Transistor |
| BLF6G20-45 | UHF power LDMOS transistor |
| BLF6G20LS-180RN | Power LDMOS Transistor |
| BLF6G21-10G | Power LDMOS Transistor |
| BLF6G10-45 | Power LDMOS Transistor |
| BLF6G10S-45 | Power LDMOS Transistor |
| BLF640 | Broadband power LDMOS transistor |
| BLF642 | Broadband power LDMOS transistor |
