BLF888 - UHF Power LDMOS Transistor

Product Overview

NXP

Part number	BLF888
Manufacturer	NXP
File Size	88.98 KB
Description	UHF Power LDMOS Transistor
Datasheet	BLF888 Datasheet
Additional preview pages of the BLF888 datasheet.

A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

I 2-tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.4 A: N Peak envelope power load power = 500 W N Power gain = 20 dB N Drain efﬁciency = 45 % N Third order intermodulation distortion = dBc I DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.4 A: N Average output power = 110 W N Power gain = 20 dB N Drain efﬁciency = 30 % N Shoulder distance =.
32 dBc (4.3 MHz from center frequ.

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Published: Aug 31, 2009 |