Datasheet4U Logo Datasheet4U.com

BLF888 Datasheet - NXP

UHF Power LDMOS Transistor

BLF888 Features

* I 2-tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.4 A: N Peak envelope power load power = 500 W N Power gain = 20 dB N Drain efficiency = 45 % N Third order intermodulation distortion = dBc I DVB performance at 858 MHz, a drain-source volt

BLF888 General Description

A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness of this device makes it id.

BLF888 Datasheet (88.98 KB)

Preview of BLF888 PDF

Datasheet Details

Part number:

BLF888

Manufacturer:

NXP ↗

File Size:

88.98 KB

Description:

Uhf power ldmos transistor.
www.DataSheet4U.com BLF888 UHF power LDMOS transistor Rev. 01 16 December 2008 Objective data sheet 1. Product profile 1.1 General descript.

📁 Related Datasheet

BLF881 Power LDMOS transistor (Ampleon)

BLF881 UHF Power LDMOS Transistor (NXP)

BLF881S Power LDMOS transistor (Ampleon)

BLF881S UHF Power LDMOS Transistor (NXP)

BLF882 Power LDMOS transistor (Ampleon)

BLF882 UHF power LDMOS transistor (NXP Semiconductors)

BLF882S Power LDMOS transistor (Ampleon)

BLF882S UHF power LDMOS transistor (NXP Semiconductors)

BLF884P Power LDMOS transistor (Ampleon)

BLF884P UHF power LDMOS transistor (NXP Semiconductors)

TAGS

BLF888 UHF Power LDMOS Transistor NXP

Image Gallery

BLF888 Datasheet Preview Page 2 BLF888 Datasheet Preview Page 3

BLF888 Distributor