Datasheet Details
- Part number
- BLF888
- Manufacturer
- NXP ↗
- File Size
- 88.98 KB
- Datasheet
- BLF888_PhilipsSemiconductors.pdf
- Description
- UHF Power LDMOS Transistor
BLF888 Description
www.DataSheet4U.com BLF888 UHF power LDMOS transistor Rev.01 * 16 December 2008 Objective data sheet 1.Product profile 1.1 General descript.BLF888 Features
* I 2-tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.4 A: N Peak envelope power load power = 500 W N Power gain = 20 dB N Drain efficiency = 45 % N Third order intermodulation distortion = dBc I DVB performance at 858 MHz, a drain-source voltBLF888 Applications
* and industrial applications. The transistor is optimized for digital applications and can deliver 110 W average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications. Table 1. Application informatio
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