BLF888 Datasheet UHF Power LDMOS Transistor

Manufacturer: NXP Semiconductors

Overview: www.DataSheet4U.com BLF888 UHF power LDMOS transistor Rev. 01 — 16 December 2008 Objective data sheet 1. Product proﬁle 1.

Datasheet Details

A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The transistor is optimized for digital applications and can deliver 110 W average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz.

The excellent ruggedness of this device makes it ideal for digital transmitter applications.

I 2-tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.4 A: N Peak envelope power load power = 500 W N Power gain = 20 dB N Drain efﬁciency = 45 % N Third order intermodulation distortion = dBc I DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.4 A: N Average output power = 110 W N Power gain = 20 dB N Drain efﬁciency = 30 % N Shoulder distance =.
32 dBc (4.3 MHz from center frequ.

Part Number	Description	Manufacturer
BLF888A	Power LDMOS transistor	Ampleon
BLF888AS	Power LDMOS transistor	Ampleon
BLF888B	Power LDMOS transistor	Ampleon
BLF888B	UHF power LDMOS transistor	NXP Semiconductors
BLF888BS	Power LDMOS transistor	Ampleon