BLF888 Datasheet PDF (UHF Power LDMOS Transistor)

BLF888 - UHF Power LDMOS Transistor

Description

A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The transistor is optimized for digital applications and can deliver 110 W average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz.

Features

I 2-tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.4 A: N Peak envelope power load power = 500 W N Power gain = 20 dB N Drain efﬁciency = 45 % N Third order intermodulation distortion = dBc I DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.4 A: N Average output power = 110 W N Power gain = 20 dB N Drain efﬁciency = 30 % N Shoulder distance =.
32 dBc (4.3 MHz from center frequ.

Datasheet Details

Part number	BLF888
Manufacturer	NXP
File Size	88.98 KB
Description	UHF Power LDMOS Transistor
Datasheet	BLF888 Datasheet
Additional preview pages of the BLF888 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com BLF888 UHF power LDMOS transistor Rev. 01 — 16 December 2008 Objective data sheet 1. Product proﬁle 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor is optimized for digital applications and can deliver 110 W average DVB-T broadband over the full UHF band from 470 MHz to 860 MHz. The excellent ruggedness of this device makes it ideal for digital transmitter applications. Table 1. Application information RF performance at VDS = 50 V in a common source 860 MHz narrowband test circuit unless otherwise speciﬁed. Mode of operation 2-tone, class AB DVB-T (8k OFDM) [1] f (MHz) f1 = 860; f2 = 860.

Published: Aug 31, 2009 |