BLF888B Overview
BLF888B; BLF888BS UHF power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V unless otherwise specified. Mode of operation f PL(AV) PL(M) Gp...
BLF888B Key Features
- Excellent ruggedness
- Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
- High power gain
- High efficiency
- Designed for broadband operation (470 MHz to 860 MHz)
- Internal input matching for high gain and optimum broadband operation
- Excellent reliability
- Easy power control
- pliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
