Datasheet Details
| Part number | BLF888B |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 319.32 KB |
| Description | UHF power LDMOS transistor |
| Datasheet |
 BLF888B Datasheet
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General Description
A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.
The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.
Table 1.
Key Features
- Excellent ruggedness.
- Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W.
- High power gain.
- High efficiency.
- Designed for broadband operation (470 MHz to 860 MHz).
- Internal input matching for high gain and optimum broadband operation.
- Excellent reliability.
- Easy power control.
- Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3.