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BLF884PS - UHF power LDMOS transistor

Download the BLF884PS datasheet PDF. This datasheet also covers the BLF884P variant, as both devices belong to the same uhf power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

Table 1.

Key Features

  • Excellent ruggedness.
  • Optimum thermal behavior and reliability, Rth(j-c) = 0.22 K/W.
  • High power gain.
  • High efficiency.
  • Designed for broadband operation (470 MHz to 860 MHz).
  • Internal input matching for high gain and optimum broadband operation.
  • Excellent reliability.
  • Easy power control.
  • Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF884P-NXPSemiconductors.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BLF884PS Power LDMOS transistor Ampleon
BLF884P Power LDMOS transistor Ampleon
BLF881 Power LDMOS transistor Ampleon
BLF881 UHF Power LDMOS Transistor NXP
BLF881S Power LDMOS transistor Ampleon

Other Datasheets by NXP Semiconductors

Part Number Description
BLF884P UHF power LDMOS transistor
BLF882 UHF power LDMOS transistor
BLF882S UHF power LDMOS transistor
BLF888B UHF power LDMOS transistor
BLF888BS UHF power LDMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLF884P; BLF884PS UHF power LDMOS transistor Rev. 2 — 16 December 2011 Product data sheet 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V unless otherwise specified. Mode of operation f PL(AV) PL(M) Gp D IMD3 IMDshldr (MHz) (W) (W) (dB) (%) (dBc) (dBc) RF performance in a common source 860 MHz narrowband test circuit 2-tone, class-AB DVB-T (8k OFDM) f1 = 860; f2 = 860.