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BLF888DS

Manufacturer: Ampleon

BLF888DS datasheet by Ampleon.

This datasheet includes multiple variants, all published together in a single manufacturer document.

BLF888DS datasheet preview

BLF888DS Datasheet Details

Part number BLF888DS
Datasheet BLF888DS BLF888D Datasheet (PDF)
File Size 357.79 KB
Manufacturer Ampleon
Description Power LDMOS transistor
BLF888DS page 2 BLF888DS page 3

BLF888DS Overview

A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Application information RF performance at VDS = 50 V in an ultra wide Doherty application.

BLF888DS Key Features

  • High efficiency
  • High power gain
  • Excellent ruggedness (VSWR  40 : 1 through all phases)
  • Excellent thermal stability
  • Integrated ESD protection
  • One Doherty design covers the

BLF888DS from other manufacturers

View BLF888DS datasheet index

Brand Logo Part Number Description Other Manufacturers
NXP Logo BLF888DS UHF power LDMOS transistor NXP
NXP Logo BLF888D UHF power LDMOS transistor NXP
NXP Logo BLF888 UHF Power LDMOS Transistor NXP
NXP Logo BLF888A UHF Power LDMOS Transistor NXP
NXP Logo BLF888AS UHF Power LDMOS Transistor NXP
Ampleon logo - Manufacturer

More Datasheets from Ampleon

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BLF888BS Power LDMOS transistor
BLF888E Power LDMOS transistor
BLF888ES Power LDMOS transistor
BLF881 Power LDMOS transistor
BLF881S Power LDMOS transistor
BLF882 Power LDMOS transistor

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