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BLF888DS

Manufacturer: NXP Semiconductors

BLF888DS datasheet by NXP Semiconductors.

This datasheet includes multiple variants, all published together in a single manufacturer document.

BLF888DS datasheet preview

BLF888DS Datasheet Details

Part number BLF888DS
Datasheet BLF888DS BLF888D Datasheet (PDF)
File Size 132.41 KB
Manufacturer NXP Semiconductors
Description UHF power LDMOS transistor
BLF888DS page 2 BLF888DS page 3

BLF888DS Overview

A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Application information RF performance at VDS = 50 V in an ultra wide Doherty application.

BLF888DS Key Features

  • High efficiency
  • High power gain
  • Excellent ruggedness (VSWR  40 : 1 through all phases)
  • Excellent thermal stability
  • Integrated ESD protection
  • One Doherty design covers the full bandwidth from 470 MHz to 860 MHz
  • Internal input matching for ease of use
  • pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

BLF888DS from other manufacturers

View BLF888DS datasheet index

Brand Logo Part Number Description Other Manufacturers
Ampleon Logo BLF888DS Power LDMOS transistor Ampleon
Ampleon Logo BLF888D Power LDMOS transistor Ampleon
Ampleon Logo BLF888A Power LDMOS transistor Ampleon
Ampleon Logo BLF888AS Power LDMOS transistor Ampleon
Ampleon Logo BLF888B Power LDMOS transistor Ampleon
NXP Semiconductors logo - Manufacturer

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