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BLF888DS - UHF power LDMOS transistor

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NXP

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BLF888DS UHF power LDMOS transistor by NXP - Datasheet Preview — Datasheet preview – BLF888DS

Datasheet Details

Part number	BLF888DS
Manufacturer	NXP
File Size	132.41 KB
Description	UHF power LDMOS transistor
Datasheet	BLF888DS Datasheet
Note	This datasheet PDF includes multiple part numbers: BLF888DS, BLF888D. Please refer to the document for exact specifications by model.
Additional preview pages of the BLF888DS datasheet.

Product details

Description

A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications.

Features

High efficiency.
High power gain.
Excellent ruggedness (VSWR  40 : 1 through all phases).
Excellent thermal stability.
Integrated ESD protection.
One Doherty design covers the full bandwidth from 470 MHz to 860 MHz.
Internal input matching for ease of use.
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Published: Jan 27, 2016 |