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BLF888DS - UHF power LDMOS transistor

Download the BLF888DS datasheet PDF. This datasheet also covers the BLF888D variant, as both devices belong to the same uhf power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications.

The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

Table 1.

Key Features

  • High efficiency.
  • High power gain.
  • Excellent ruggedness (VSWR  40 : 1 through all phases).
  • Excellent thermal stability.
  • Integrated ESD protection.
  • One Doherty design covers the full bandwidth from 470 MHz to 860 MHz.
  • Internal input matching for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF888D-NXP.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLF888D; BLF888DS UHF power LDMOS transistor Rev. 2 — 27 June 2014 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V in an ultra wide Doherty application. Test signal f PL(AV) Gp D (MHz) (W) (dB) (%) DVB-T (8k OFDM) 470 to 860 115 to 134 [1] 17 40 to 48 [1] IMDshldr (dBc) 38 to 44 [2] PAR (dB) 8 [3] [1] Depending on selected channel. [2] Depending on exciter used. [3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. 1.