BLF888AS Datasheet | NXP Semiconductors

BLF888A; BLF888AS UHF power LDMOS transistor Rev. 5 - 4 November 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V unless otherwise specified. Mode of operation f (MHz) CW CW (42 V) 2-tone, class-AB pulsed, class-AB [1] DVB-T (8k OFDM) 650 650 f1 = 860; f2 = 860.1 860 858 858 DVB-T (8k OFDM) 858 858 [1] [2] [3] Measured at  = 10 %; tp = 100 s. Measured [dBc] with delta marker at 4.3 MHz from center...