BLF888AS
Representative BLF888AS image (package may vary by manufacturer)
Overview
A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.
- Excellent ruggedness (VSWR 40 : 1 through all phases) Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W Suitable for CW UHF and ISM applications High power gain High efficiency Designed for broadband operation (470 MHz to 860 MHz) Internal input matching for high gain and optimum broadband operation Excellent reliability Easy power control Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC NXP Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor
