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BLF888D

Manufacturer: NXP Semiconductors

BLF888D datasheet by NXP Semiconductors.

BLF888D datasheet preview

BLF888D Datasheet Details

Part number BLF888D
Datasheet BLF888D-NXP.pdf
File Size 132.41 KB
Manufacturer NXP Semiconductors
Description UHF power LDMOS transistor
BLF888D page 2 BLF888D page 3

BLF888D Overview

A 600 W LDMOS RF power transistor for broadcast Doherty transmitter applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Application information RF performance at VDS = 50 V in an ultra wide Doherty application.

BLF888D Key Features

  • High efficiency
  • High power gain
  • Excellent ruggedness (VSWR  40 : 1 through all phases)
  • Excellent thermal stability
  • Integrated ESD protection
  • One Doherty design covers the full bandwidth from 470 MHz to 860 MHz
  • Internal input matching for ease of use
  • pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

BLF888D from other manufacturers

View BLF888D datasheet index

Brand Logo Part Number Description Other Manufacturers
Ampleon Logo BLF888D Power LDMOS transistor Ampleon
Ampleon Logo BLF888DS Power LDMOS transistor Ampleon
Ampleon Logo BLF888A Power LDMOS transistor Ampleon
Ampleon Logo BLF888AS Power LDMOS transistor Ampleon
Ampleon Logo BLF888B Power LDMOS transistor Ampleon
NXP Semiconductors logo - Manufacturer

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