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BLF888BS - UHF power LDMOS transistor

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NXP Semiconductors

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BLF888BS UHF power LDMOS transistor by NXP Semiconductors - Datasheet Preview — Datasheet preview – BLF888BS

Datasheet Details

Part number	BLF888BS
Manufacturer	NXP Semiconductors
File Size	319.32 KB
Description	UHF power LDMOS transistor
Datasheet	BLF888BS Datasheet
Note	This datasheet PDF includes multiple part numbers: BLF888BS, BLF888B. Please refer to the document for exact specifications by model.
Additional preview pages of the BLF888BS datasheet.

Product details

Description

A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

Features

Excellent ruggedness.
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W.
High power gain.
High efficiency.
Designed for broadband operation (470 MHz to 860 MHz).
Internal input matching for high gain and optimum broadband operation.
Excellent reliability.
Easy power control.
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3.

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Published: Jan 27, 2016 |