BLF888A Datasheet - NXP

UHF Power LDMOS Transistor

BLF888A Features

* Excellent ruggedness (VSWR  40 : 1 through all phases) Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W Suitable for CW UHF and ISM applications High power gain High efficiency Designed for broadband operation (470 MHz to 860

BLF888A General Description

A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V unless otherwise specified. Mode.

BLF888A Datasheet (237.11 KB)