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BLF888A - UHF Power LDMOS Transistor

Description

A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

Table 1.

Features

  • Excellent ruggedness (VSWR  40 : 1 through all phases) Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W Suitable for CW UHF and ISM.

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Datasheet Details

Part number BLF888A
Manufacturer NXP Semiconductors
File Size 237.11 KB
Description UHF Power LDMOS Transistor
Datasheet download datasheet BLF888A Datasheet
Additional preview pages of the BLF888A datasheet.

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Full PDF Text Transcription

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BLF888A; BLF888AS UHF power LDMOS transistor Rev. 5 — 4 November 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V unless otherwise specified. Mode of operation f (MHz) CW CW (42 V) 2-tone, class-AB pulsed, class-AB [1] DVB-T (8k OFDM) 650 650 f1 = 860; f2 = 860.1 860 858 858 DVB-T (8k OFDM) 858 858 [1] [2] [3] Measured at  = 10 %; tp = 100 s. Measured [dBc] with delta marker at 4.3 MHz from center frequency. PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.
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