BLF888AS transistor equivalent, uhf power ldmos transistor.
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* Excellent ruggedness (VSWR 40 : 1 through all phases) Optimum thermal behavior and reliability, Rth(j-c) = 0.
and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter a.
A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.
Table 1. Application information RF performa.
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