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BLF888AS - UHF Power LDMOS Transistor

This page provides the datasheet information for the BLF888AS, a member of the BLF888A UHF Power LDMOS Transistor family.

Description

A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.

Table 1.

Features

  • Excellent ruggedness (VSWR  40 : 1 through all phases) Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W Suitable for CW UHF and ISM.

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Datasheet preview – BLF888AS

Datasheet Details

Part number BLF888AS
Manufacturer NXP Semiconductors
File Size 237.11 KB
Description UHF Power LDMOS Transistor
Datasheet download datasheet BLF888AS Datasheet
Additional preview pages of the BLF888AS datasheet.

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Full PDF Text Transcription

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BLF888A; BLF888AS UHF power LDMOS transistor Rev. 5 — 4 November 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Table 1. Application information RF performance at VDS = 50 V unless otherwise specified. Mode of operation f (MHz) CW CW (42 V) 2-tone, class-AB pulsed, class-AB [1] DVB-T (8k OFDM) 650 650 f1 = 860; f2 = 860.1 860 858 858 DVB-T (8k OFDM) 858 858 [1] [2] [3] Measured at  = 10 %; tp = 100 s. Measured [dBc] with delta marker at 4.3 MHz from center frequency. PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.
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