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BLF8G27LS-150V - Power LDMOS transistor

General Description

150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Overview

BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev.

3 — 26 June 2013 Product data sheet 1.

Product profile 1.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low Rth providing excellent thermal stability.
  • Decoupling leads to enable improved video bandwidth (60 MHz typical).
  • Lower output capacitance for improved performance in Doherty.