BLV33F
Key Features
- Internally matched input for wideband operation and high power gain
- Diffused emitter ballasting resistors for an optimum temperature profile
- Gold metallization ensures excellent reliability. APPLICATIONS
- Primarily intended for use in linear VHF amplifiers for television transmitters and transposers. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a 1⁄ ” 6 lead SOT119A capstan package with ceramic cap. 2 All leads are isolated from the flange. 1 2 BLV33F
