BLV32F NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

Description

BLV32F NPN SILICON RF POWER TRANSISTOR .
The ASI BLV32F is Designed for in linear v. Diffused emitter ballast.

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Datasheet Specifications

Part number: BLV32F
Manufacturer: Advanced Semiconductor
File Size: 18.99 KB
Datasheet: BLV32F_AdvancedSemiconductor.pdf
Description: NPN SILICON RF POWER TRANSISTOR

Features

* Diffused emitter ballasting resistors
* PG = 16 dB at 10 W/224 MHz
* Omnigold™ Metalization System PACKAGE STYLE .500 6L FLG MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ TSTG θJC O O 4.0 A 60 V 32 V 60 V 4.0 V 82 W @ TC = 25 C -65 C to +200 C -65 C to +150 C 2.1 C/W

BLV32F Distributors

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📌 All Tags

BLV32F NPN SILICON POWER TRANSISTOR Advanced Semiconductor

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