BLV33F Datasheet - NXP

BLV33F VHF linear power transistor

NPN silicon planar epitaxial transistor encapsulated in a 1⁄ ” 6 lead SOT119A capstan package with ceramic cap. 2 All leads are isolated from the flange. 1 2 BLV33F PINNING - SOT119A PIN 1 2 3 4 5 6 SYMBOL e e b c e e emitter emitter base collector emitter emitter DESCRIPTION handbook, halfpage c.

BLV33F Features

* Internally matched input for wideband operation and high power gain

* Diffused emitter ballasting resistors for an optimum temperature profile

* Gold metallization ensures excellent reliability. APPLICATIONS

* Primarily intended for use in linear VHF amplifiers for

BLV33F_PhilipsSemiconductors.pdf