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BLV108 Datasheet - SHANGHAI BELLING

BLV108 Vertical N-channel MOSFET

www.DataSheet4U.com BLV108 N MOSFET : : N VDMOS，，： VDSS VGSS ID PD Tj, TSDG (T=25℃ (T=25℃) 200 + 20 300 1 -55 to +150 V V mA W o Power Dissipation for Dual Operation C Rth j-a Thermal Resistance, Junction to Ambient TA=25oC o 125 K/W 200 V BVDSS I DSS I GSS VGS = 0V , I D = 10uA VDS = 160V , VGS = 0V VGS = ±20V , V DS = 0V 1 +100 0.4 1.8 5 uA nA V VGS (th ) R DS ( on ) V DS = VGS , I D = 1mA VGS = 2.8V , I D = 100mA Ω http://www.belling.com.

BLV108_SHANGHAIBELLING.pdf