BLVP304 Datasheet - SHANGHAI BELLING

BLVP304 P-channel vertical MOSFET

www.DataSheet4U.com BLVP304 P MOSFET : : P VDMOS，，： (T=25℃ (T=25℃) VDSS VGSS ID PD Tj, TSDG Power Dissipation for Dual Operation -300 + 20 -170 1 -55 to +150 V V mA W o C Rth j-a Thermal Resistance, Junction to Ambient 125 K/W o (T (TA=25 C) -300 -1.7 -100 +100 -2.55 18 V BV DSS I DSS I GSS VGS (th ) R DS ( on ) VGS = 0V , I D = 10uA VDS = 240V , VGS = 0V VGS = ±20V , VDS = 0V VDS = VGS , I D = 1mA VGS = 10V , I D.

BLVP304_SHANGHAIBELLING.pdf