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BLV4N60 Datasheet - SHANGHAI BELLING

N-channel Enhancement Mode Power MOSFET

BLV4N60 General Description

This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol VDS VGS ID IDM PD EAS IAR EAR Tj TSDG Parameter Drain-Source Voltage Gate-Source Vol.

BLV4N60 Datasheet (463.00 KB)

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Datasheet Details

Part number:

BLV4N60

Manufacturer:

SHANGHAI BELLING

File Size:

463.00 KB

Description:

N-channel enhancement mode power mosfet.
BLV4N60 N-channel Enhancement Mode Power MOSFET Avalanche Energy Specified Fast Switching Simple Drive Requirements BV.

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BLV4N60 N-channel Enhancement Mode Power MOSFET SHANGHAI BELLING

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BLV4N60 General Description

Datasheet Details

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