BLV40N20 - N-Channel Enhancement Mode Power MOSFET
BLV40N20 N-channel Enhancement Mode Power MOSFET Preliminary SEP.
2009 BVDSS RDS(ON) ID 200V 50mΩ 40A 200V 40A VDMOS ，、， PDP ( TC=25oC ) VDS VGS ID IDR ( 1) ( 1) : 1.
PW<10us, duty cycle<1% http://www.belling.com.cn 200 + 30 40 160 40 160 V V A A A A Page 1/3 BLV40N20 ( TC=25C ) BVDSS RDS(ON) VGS(th) IDSS IGSS Ciss Coss Crss - - VGS=0V, ID=1mA VGS=10V, ID=20A VDS=VGS, ID=250uA VDS=200V, VGS=0V VGS= ± 20V VDS=25V VGS=0V
