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BLV45-12, BLV45 Datasheet - Philips

BLV45-12, BLV45, VHF power transistor

DISCRETE SEMICONDUCTORS DATA SHEET BLV45/12 VHF power transistor Product specification August 1986 http://www.Datasheet4U.com Philips Semiconductor.
N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band.

Features

* multi-base structure and emitter-ballasting resistors for an optimum temperature profile
* gold metallization ensures excellent reliability
* internal matching to achieve an optimum wideband capability and high power gain The transistor has a 6-lead flange envelope with a c

Applications

* These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Phi

BLV45-Philips.pdf

This datasheet PDF includes multiple part numbers: BLV45-12, BLV45. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

BLV45-12, BLV45

Manufacturer:

Philips

File Size:

88.33 KB

Description:

VHF power transistor

Note:

This datasheet PDF includes multiple part numbers: BLV45-12, BLV45.
Please refer to the document for exact specifications by model.

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