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BLV103 UHF power transistor

BLV103 Description

DISCRETE SEMICONDUCTORS DATA SHEET BLV103 UHF power transistor Product speciļ¬cation March 1993 Philips Semiconductors Product speciļ¬cation UHF po.
NPN silicon planar epitaxial transistor encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap.

BLV103 Features

* Internal matching for an optimum wideband capability and high gain
* Emitter-ballasting resistors for optimum temperature profile

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