Datasheet4U Logo Datasheet4U.com

BLV193 UHF power transistor

BLV193 Description

DISCRETE SEMICONDUCTORS DATA SHEET BLV193 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF po.
NPN silicon planar epitaxial transistor intended for common emitter class-A and class-AB operation in the 900 MHz communications band.

BLV193 Features

* Emitter ballasting resistors for an optimum temperature profile

📥 Download Datasheet

Preview of BLV193 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • BLV108 - Vertical N-channel MOSFET (SHANGHAI BELLING)
  • BLV1N60 - N-Channel Enhancement Mode Power MOSFET (BELLING)
  • BLV1N60A - N-Channel Enhancement Mode Power MOSFET (BELLING)
  • BLV297 - N-Channel Enhancement Mode Power MOSFET (BELLING)
  • BLV2N60 - N-channel Enhancement Mode Power MOSFET (SHANGHAI BELLING)
  • BLV30 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
  • BLV31 - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
  • BLV32F - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)

📌 All Tags

NXP BLV193-like datasheet