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BLV1N60A

N-Channel Enhancement Mode Power MOSFET

BLV1N60A General Description

This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol VDS VGS ID IDM PD EAS IAR EAR Tj TSDG Parameter Drain-Source Voltage Gate-Source V.

BLV1N60A Datasheet (476.43 KB)

Preview of BLV1N60A PDF

Datasheet Details

Part number:

BLV1N60A

Manufacturer:

BELLING

File Size:

476.43 KB

Description:

N-channel enhancement mode power mosfet.
BLV1N60A N-channel Enhancement Mode Power MOSFET

* Avalanche Energy Specified

* Fast Switching

* Simple Drive Requirements B.

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BLV1N60A N-Channel Enhancement Mode Power MOSFET BELLING

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