BLV297 N-Channel Enhancement Mode Power MOSFET

BELLING

Description

BLV297 N-channel Enhancement Mode Power MOSFET * Ease of Paralleling * Fast Switching * Simple Drive Requirements BVDSS RDS(.
This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.

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Datasheet Specifications

Part number: BLV297
Manufacturer: BELLING
File Size: 79.75 KB
Datasheet: BLV297-BELLING.pdf
Description: N-Channel Enhancement Mode Power MOSFET

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BLV297 N-Channel Enhancement Mode Power MOSFET BELLING

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