BLV297 Datasheet - BELLING

BLV297 N-Channel Enhancement Mode Power MOSFET

This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency logic level circuit. o Die size with scribe line Scribe line o Die Thickness o Metallization Top Bottom o Bonding Pad Size Gate Source o Passivation 1570µm X 1570µm 80um 300± 20u.

BLV297-BELLING.pdf

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Datasheet Details

Part number:

BLV297

Manufacturer:

BELLING

File Size:

79.75 KB

Description:

N-channel enhancement mode power mosfet.

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BLV297 BLV297 N-Channel Enhancement Mode Power MOSFET BELLING

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