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BLV297 N-Channel Enhancement Mode Power MOSFET

BLV297 Description

BLV297 N-channel Enhancement Mode Power MOSFET * Ease of Paralleling * Fast Switching * Simple Drive Requirements BVDSS RDS(.
This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology.

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Datasheet Details

Part number
BLV297
Manufacturer
BELLING
File Size
79.75 KB
Datasheet
BLV297-BELLING.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET BELLING
BELLING BLV297-like datasheet