Datasheet4U Logo Datasheet4U.com

BLV1N60 Datasheet - BELLING

BLV1N60 N-Channel Enhancement Mode Power MOSFET

This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol VDS VGS ID IDM PD EAS IAR EAR Tj TSDG Parameter Drain-Source Voltage Gate-Source V.

BLV1N60 Datasheet (480.42 KB)

Preview of BLV1N60 PDF
BLV1N60 Datasheet Preview Page 2 BLV1N60 Datasheet Preview Page 3

Datasheet Details

Part number:

BLV1N60

Manufacturer:

BELLING

File Size:

480.42 KB

Description:

N-channel enhancement mode power mosfet.

📁 Related Datasheet

BLV1N60A N-Channel Enhancement Mode Power MOSFET (BELLING)

BLV10 VHF power transistor (NXP)

BLV100 UHF power transistor (NXP)

BLV103 UHF power transistor (NXP)

BLV108 Vertical N-channel MOSFET (SHANGHAI BELLING)

BLV11 VHF power transistor (NXP)

BLV12 VHF power transistor (NXP)

BLV193 UHF power transistor (NXP)

TAGS

BLV1N60 N-Channel Enhancement Mode Power MOSFET BELLING

BLV1N60 Distributor