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BLV2N60 Datasheet - SHANGHAI BELLING

BLV2N60 N-channel Enhancement Mode Power MOSFET

This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol VDS VGS ID IDM PD EAS IAR EAR Tj TSDG Parameter Drain-Source Voltage Gate-Source V.

BLV2N60 Datasheet (456.36 KB)

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Datasheet Details

Part number:

BLV2N60

Manufacturer:

SHANGHAI BELLING

File Size:

456.36 KB

Description:

N-channel enhancement mode power mosfet.

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BLV2N60 N-channel Enhancement Mode Power MOSFET SHANGHAI BELLING

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