Datasheet4U Logo Datasheet4U.com

BLV2N60

N-channel Enhancement Mode Power MOSFET

BLV2N60 General Description

This advanced high voltage MOSFET is produced using Belling’s proprietary DMOS technology. Designed for high efficiency switch mode power supply. Absolute Maximum Ratings ( TC=25oC unless otherwise noted ) Symbol VDS VGS ID IDM PD EAS IAR EAR Tj TSDG Parameter Drain-Source Voltage Gate-Source V.

BLV2N60 Datasheet (456.36 KB)

Preview of BLV2N60 PDF

Datasheet Details

Part number:

BLV2N60

Manufacturer:

SHANGHAI BELLING

File Size:

456.36 KB

Description:

N-channel enhancement mode power mosfet.
BLV2N60 N-channel Enhancement Mode Power MOSFET

* Avalanche Energy Specified

* Fast Switching

* Simple Drive Requirements BV.

📁 Related Datasheet

BLV20 VHF power transistor (NXP)

BLV2042 UHF power transistor (NXP)

BLV2044 UHF power transistor (NXP)

BLV2045N UHF power transistor (NXP)

BLV2046 UHF power transistor (NXP)

BLV2047 UHF power transistor (NXP)

BLV21 UHF power transistor (NXP)

BLV25 VHF power transistor (NXP)

BLV297 N-Channel Enhancement Mode Power MOSFET (BELLING)

BLV10 VHF power transistor (NXP)

TAGS

BLV2N60 N-channel Enhancement Mode Power MOSFET SHANGHAI BELLING

Image Gallery

BLV2N60 Datasheet Preview Page 2 BLV2N60 Datasheet Preview Page 3

BLV2N60 Distributor