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BLV897 Datasheet UHF push-pull power transistor

Manufacturer: NXP Semiconductors

General Description

collector 1 collector 2 base 1 base 2 common emitters connected to flange c1 2 b1 e 5 b2 DESCRIPTION NPN silicon planar transistor with two sections in push-pull configuration.

The device is encapsulated in a SOT324B 4-lead rectangular flange package with a ceramic cap.

The common emitters are connected to the flange.

Overview

DISCRETE SEMICONDUCTORS DATA SHEET BLV897 UHF push-pull power transistor Preliminary specification Supersedes data of 1997 Oct 03 1997 Nov 10 Philips Semiconductors Preliminary specification UHF push-pull power.

Key Features

  • Internal input matching for an optimum wideband capability and high gain.
  • Polysilicon emitter ballasting resistors for an optimum temperature profile.
  • Gold metallization ensures excellent reliability.