BLV897 transistor equivalent, uhf push-pull power transistor.
* Internal input matching for an optimum wideband capability and high gain
* Polysilicon emitter ballasting resistors for an optimum temperature profile
* Gol.
* Common emitter class-AB operation in base stations in the 800 to 960 MHz frequency band.
handbook, halfpage
BLV89.
collector 1 collector 2 base 1 base 2 common emitters connected to flange
c1 2 b1 e 5 b2
DESCRIPTION NPN silicon planar transistor with two sections in push-pull configuration. The device is encapsulated in a SOT324B 4-lead rectangular flange packa.
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