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BLV897 UHF push-pull power transistor

BLV897 Description

DISCRETE SEMICONDUCTORS DATA SHEET BLV897 UHF push-pull power transistor Preliminary speciļ¬cation Supersedes data of 1997 Oct 03 1997 Nov 10 Philip.
collector 1 collector 2 base 1 base 2 common emitters connected to flange c1 2 b1 e 5 b2 DESCRIPTION NPN silicon planar transistor with two sections.

BLV897 Features

* Internal input matching for an optimum wideband capability and high gain
* Polysilicon emitter ballasting resistors for an optimum temperature profile

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UHF push-pull power transistor NXP
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