* Low RDS(on)
* Direct interface to C-MOS
* High-speed switching
* No second breakdown PINNING - TO-92 VARIANT 1 2 3 = source = gate = drain QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tam
BS250
50.00 KB
P-channel enhancement mode vertical d-mos transistor.
DISCRETE SEMICONDUCTORS DATA SHEET BS250 P-channel enhancement mode vertical D-MOS transistor Product speciļ¬cation File under Discrete Semiconductor.
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