D-MOS Datasheet | Specifications & PDF Download

3.7A, 20V N 　N 　N-Channel Enhancement Mode Field Effect Transistor SMD 　　Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design fo

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MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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CHIPSET-IC.COM N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 12A G UIS,

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A09T http://www.osen.net.cn 30V N-CHANNEL MOSFET  Features：  Fast switching speed  High input impedance and low level drive  Improved dv/dt c

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Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr

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PIC16F87X 28/40-Pin 8-Bit CMOS FLASH Microcontrollers Devices Included in this Data Sheet: • PIC16F873 • PIC16F874 • PIC16F876 • PIC16F877 Microco

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta

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RTC6705 RTC6705-DST-001 Data Sheet SEP 2007 RTC6705 CMOS 5.8GHz Band FM Transmitter Product Description The RTC6705 is a wide-band FM transmitter int

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TDA7293 120-volt, 100-watt, DMOS audio amplifier with mute and standby Features „ Multipower BCD technology „ Very high operating voltage range (±50

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http://www.ncepower.com Pb Free Product NCE4688 N and P-Channel Enhancement Mode Power MOSFET Description The NCE4688 uses advanced trench technolog

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HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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3401 DESCRIPTION The 3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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RTC6715 RTC6715-DST-001 Data Sheet SEP 2007 RTC6715 CMOS 5.8GHz Band FM Receiver Product Description The RTC6715 is a highly integrated FM receiver i

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PIC16F870/871 Data Sheet 28/40-Pin, 8-Bit CMOS FLASH Microcontrollers  2003 Microchip Technology Inc. DS30569B Note the following details of the c

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AOD452 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD452 uses advanced trench technology and design to pro

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Low Dropout Voltage High PSRR 500mA CMOS LDO Regulator Si CE6260 Low Dropout Voltage High PSRR 500mA CMOS LDO Regulator CE6260 Series „ INTRODUCTI

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RM3401 P-Channel Enhancement Mode Power MOSFET Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge

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HY4008W/A N-Channel Enhancement Mode MOSFET Features • 80V/200A RDS(ON) = 2.9 mΩ (typ.) @ VGS=10V • 100% avalanche tested • Reliable and Rugged • Le

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® TDA7295 80V - 80W DMOS AUDIO AMPLIFIER WITH MUTE/ST-BY VERY HIGH OPERATING VOLTAGE RANGE (±40V) DMOS POWER STAGE HIGH OUTPUT POWER (UP TO 80W MUSI

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PD -94000 IRF7328 HEXFET® Power MOSFET q q q q Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel VDSS -30V

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