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NXP Semiconductors Electronic Components Datasheet

BSR40 Datasheet

NPN medium power transistors

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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BSR40; BSR41; BSR42; BSR43
NPN medium power transistors
Product specification
Supersedes data of 1997 Apr 07
1999 Apr 28


NXP Semiconductors Electronic Components Datasheet

BSR40 Datasheet

NPN medium power transistors

No Preview Available !

Philips Semiconductors
NPN medium power transistors
Product specification
BSR40; BSR41; BSR42; BSR43
FEATURES
High current (max. 1 A)
Low voltage (max. 80 V).
APPLICATIONS
Thick and thin-film circuits
Telephony and general industrial applications.
DESCRIPTION
NPN medium power transistor in a SOT89 plastic
package. PNP complements: BSR30; BSR3 and BSR33.
PINNING
PIN
1
2
3
handbook, halfpage
DESCRIPTION
emitter
collector
base
2
3
1
MARKING
TYPE
NUMBER
BSR40
BSR41
MARKING TYPE
CODE NUMBER
AR1 BSR42
AR2 BSR43
MARKING
CODE
AR3
AR4
1
Bottom view
2
3
MAM296
Fig.1 Simplified outline (SOT89) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
BSR40; BSR41
BSR42; BSR43
collector-emitter voltage
BSR40; BSR41
BSR42; BSR43
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb 25 °C; note 1
70 V
90 V
60 V
80 V
5V
1A
2A
0.2 A
1.35 W
65
+150
°C
150 °C
65
+150
°C
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
1999 Apr 28
2


Part Number BSR40
Description NPN medium power transistors
Maker NXP
Total Page 8 Pages
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