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NXP Semiconductors Electronic Components Datasheet

BU1508DX Datasheet

Silicon Diffused Power Transistor

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Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1508DX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0 V
Ths 25 ˚C
IC = 4.5 A; IB = 1.1 A
IF = 4.5 A
ICM = 4.5 A; IB(end) = 1.1 A
TYP.
-
-
-
-
-
-
4.5
1.6
0.4
MAX.
1500
700
8
15
35
1.0
-
-
0.6
UNIT
V
V
A
A
W
V
A
V
µs
PINNING - SOT186A
PIN DESCRIPTION
1 base
2 collector
3 emitter
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
c
b
Rbe
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value 1
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20 ms period
Ths 25 ˚C
THERMAL RESISTANCES
SYMBOL
Rth j-hs
Rth j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
8
15
4
6
100
5
35
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
-
55
MAX.
3.6
-
UNIT
K/W
K/W
1 Turn-off current.
September 1997
1
Rev 1.300


NXP Semiconductors Electronic Components Datasheet

BU1508DX Datasheet

Silicon Diffused Power Transistor

No Preview Available !

Philips Semiconductors
Silicon Diffused Power Transistor
Product specification
BU1508DX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. 65% ; clean and dustfree
Cisol Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
- 2500 V
- 10 - pF
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
ICES Collector cut-off current 2
ICES
IEBO
BVEBO
Rbe
VCEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
VF
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
Diode forward voltage
CONDITIONS
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = VCESMmax;
Tj = 125˚C
VEB = 7.5 V; IC = 0 A
IB = 600 mA
VEB = 7.5 V
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 4.5 A; IB = 1.1 A
IC = 4.5 A; IB = 1.7 A
IC = 1 A; VCE = 5 V
IC = 4.5 A; VCE = 1 V
IF = 4.5 A
MIN.
-
-
140
7.5
-
700
-
-
-
4
-
TYP. MAX. UNIT
- 1.0 mA
- 2.0 mA
- 390
13.5 -
33 -
--
mA
V
V
- 1.0
- 1.3
13 -
5.5 7.0
1.6 2.0
V
V
V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
Cc Collector capacitance
Switching times (line deflection
circuit). Fig.1, Fig.2 and Fig.3.
ts Turn-off storage time
tf Turn-off fall time
CONDITIONS
IE = 0 A; VCB = 10 V; f = 1 MHz
ICM = 4.5 A; IB(end) = 1.1 A; LB = 6 µH;
-VBB = 4 V; (-dIB/dt = 0.6 A/µs)
TYP. MAX. UNIT
80 - pF
5.0 6.0
0.4 0.6
µs
µs
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.300


Part Number BU1508DX
Description Silicon Diffused Power Transistor
Maker NXP
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BU1508DX Datasheet PDF






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