BUK483-60A - PowerMOS transistor

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.

The device is intended for use in automotive and general purpose switching applications.

NXP Semiconductors

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BUK483-60A PowerMOS transistor by NXP - Datasheet Preview — Datasheet preview – BUK483-60A

Datasheet Details

Part number	BUK483-60A
Manufacturer	NXP Semiconductors
File Size	72.16 KB
Description	PowerMOS transistor
Datasheet	BUK483-60A Datasheet
Additional preview pages of the BUK483-60A datasheet.

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Full PDF Text Transcription

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Philips Semiconductors Product specification PowerMOS transistor BUK483-60A GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in automotive and general purpose switching applications. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance; VGS = 10 V MAX. 60 3.2 1.8 150 0.

Published: Mar 23, 2005 |