Datasheet4U Logo Datasheet4U.com

BUK7506-30 TrenchMOS transistor Standard level FET

📥 Download Datasheet Datasheet Preview Page 1

Description

Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL .
N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology.

📥 Download Datasheet

Preview of BUK7506-30 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Applications

* BUK7506-30 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 30 75 188 175 6 UNIT V A W ˚C mΩ PINNING - TO220AB PIN 1 2 3 tab gate drain source drain D

BUK7506-30 Distributors

📁 Related Datasheet

  • BUK7506-75B - N-channel TrenchMOS standard level FET (NXP Semiconductors)
  • BUK7507-30B - N-Channel MOSFET (NXP Semiconductors)
  • BUK7507-55B - N-Channel MOSFET (NXP Semiconductors)
  • BUK7508-40B - N-channel TrenchMOS standard level FET (NXP Semiconductors)
  • BUK7508-55A - N-Channel MOSFET (NXP Semiconductors)
  • BUK7509-55A - N-Channel MOSFET (NXP Semiconductors)

📌 All Tags

TrenchMOS transistor Standard level FET NXP
NXP BUK7506-30-like datasheet