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BUK9MNN-65PKK - Dual TrenchPLUS FET Logic Level FET

General Description

Dual N-channel enhancement mode field-effect power transistor in SO20.

Device is manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring very low on-state resistance, integrated current sensing transistors and over temperature protection diodes.

Key Features

  • Integrated current sensors.
  • Integrated temperature sensors 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com BUK9MNN-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 01 — 27 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance (HPA) TrenchPLUS technology, featuring very low on-state resistance, integrated current sensing transistors and over temperature protection diodes. 1.2 Features and benefits „ Integrated current sensors „ Integrated temperature sensors 1.3 Applications „ Lamp switching „ Motor drive systems „ Power distribution „ Solenoid drivers 1.4 Quick reference data Table 1.