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BUT12XI Silicon Diffused Power Transistor

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Description

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT12XI GENERAL .
Improved high-voltage, high-speed glass-passivated npn power transistor in a plastic full-pack envelope specially suited for overhead/high frequency l.

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Applications

* and converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissip

BUT12XI Distributors

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