IRF530N datasheet, transistor equivalent, NXP

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Features and benefits

* ’Trench’ technology
* Low on-state resistance
* Fast switching
* Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 17 A g RDS(ON.

Application

* d.c. to d.c. converters
* switched mode power supplies The IRF530N is supplied in the SOT78 (TO220AB) conventi.

Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications:
* d.c. to d.c. converters
* switched mode power supplies The IRF530N is supplied in the SOT78 (TO220AB) conventional leaded.

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