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IRF530NSPBF - HEXFET Power MOSFET

Download the IRF530NSPBF datasheet PDF (IRF530NLPBF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for hexfet power mosfet.

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

Features

  • ns are shown in millimeters (inches) D2Pak Package Outline D2Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 5 3 0 S W IT H L OT COD E 80 2 4 AS S E M B L E D ON W W 0 2, 20 00 IN T H E AS S E M B L Y L IN E "L " N ote: "P " in as s em bly lin e po s itio n in dicates "L ead-F r ee" IN T E R N AT IO N AL R E C T IF IE R L OGO AS S E M B L Y L O T CO D E P AR T N U M B E R F 5 30 S D AT E C O D E Y E AR 0 = 2 0 0 0 W E E K 02 L IN E L OR IN T E R N AT IO N AL R E C T IF IE R L O GO.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF530NLPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by International Rectifier

Full PDF Text Transcription

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PD - 95100 HEXFET Power MOSFET Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l IRF530NSPbF IRF530NLPbF ® VDSS = 100V RDS(on) = 90mΩ D G S ID = 17A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.
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