LX1214E500X transistor equivalent, npn microwave power transistor.
* Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
* Interdigitated structure provides high emitter efficien.
Intended for use in common emitter, class AB amplifiers in CW conditions for professional applications between 1.2 and 1.
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with emitter connected to flange.
LX1214E500X
QUICK REFERENCE DATA Microwave performance up to Tmb = 25 °C in a common emitter class AB. MODE OF OPER.
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