Datasheet4U.com

MRF18060BLR3 - RF Power Field Effect Transistor

NXP

📥 Download Datasheet

MRF18060BLR3 Datasheet Preview — Preview of MRF18060BLR3 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	MRF18060BLR3
Manufacturer	NXP ↗
File Size	350.69 KB
Description	RF Power Field Effect Transistor
Datasheet	MRF18060BLR3-NXP.pdf

MRF18060BLR3 Product details

Features

Internally Matched for Ease of Use.
High Gain, High Efficiency and High Linearity.
Integrated ESD Protection.
Designed for Maximum Gain and Insertion Phase Flatness.
Excellent Thermal Stability.
Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch.

📁 MRF18060BLR3 Similar Datasheet

MRF18060B - RF Power Field Effect Transistors (Motorola)
MRF18060BR3 - RF Power Field Effect Transistors (Motorola)
MRF18060BS - RF Power Field Effect Transistors (Motorola)
MRF18060BSR3 - RF Power Field Effect Transistors (Motorola)
MRF18060A - RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF18060ALR3 - RF Power Field Effect Transistors (Freescale Semiconductor)
MRF18060ALSR3 - RF POWER FIELD EFFECT TRANSISTORS (Motorola)
MRF18060AR3 - RF POWER FIELD EFFECT TRANSISTORS (Motorola)

Other Datasheets by NXP

MRF18060BLSR3 - RF Power Field Effect Transistor
MRF101AN - RF Power LDMOS Transistors
MRF101BN - RF Power LDMOS Transistors
MRF13750H - RF Power LDMOS Transistors
MRF13750HS - RF Power LDMOS Transistors
MRF1K50GN - RF Power LDMOS Transistors

Published: May 18, 2019 |