900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

MRF24G300HS Datasheet

RF Power GaN Transistors

No Preview Available !

NXP Semiconductors
Technical Data
RF Power GaN Transistors
These 300 W CW GaN transistors are designed for industrial, scientific and
medical (ISM) applications at 2450 MHz. These devices are suitable for use in
CW, pulse, cycling and linear applications. These high gain, high efficiency
devices are easy to use and will provide long life in even the most demanding
environments.
These parts are characterized and performance is guaranteed for
applications operating in the 2400 to 2500 MHz band. There is no guarantee of
performance when these parts are used in applications designed outside of
these frequencies.
Typical Performance: In 2400–2500 MHz MRF24G300HS reference circuit,
VDD = 48 Vdc, VGS(A+B) = –5 Vdc (1)
Frequency
(MHz)
Signal Type
Pin
(W)
Pout
(W)
Gps
(dB)
D
(%)
2400
CW 10.0 336 15.3 70.4
2450
10.0 332 15.2 73.0
2500
10.0 307 14.9 74.4
1. All data measured in fixture with device soldered to heatsink.
Load Mismatch/Ruggedness
Frequency
Signal
Pin Test
(MHz)
Type
VSWR
(W)
Voltage
2450
Pulse
(100 sec,
20% Duty
Cycle)
> 20:1 at
All Phase
Angles
12.6 Peak
55
Result
No Device
Degradation
Features
Advanced GaN on SiC, for optimal thermal performance
Characterized for CW, long pulse (up to several seconds) and short pulse
operations
Device can be used in a single--ended or push--pull configuration
Input matched for simplified input circuitry
Qualified up to 55 V
Suitable for linear application
Typical Applications
Industrial heating
Welding and heat sealing
Plasma generation
Lighting
Scientific instrumentation
Medical
– Microwave ablation
– Diathermy
Document Number: MRF24G300HS
Rev. 0, 09/2019
MRF24G300HS
MRF24G300H
2400–2500 MHz, 300 W CW, 50 V
WIDEBAND
RF POWER GaN TRANSISTORS
NI--780S--4L
MRF24G300HS
NI--780H--4L
MRF24G300H
Gate A 3
1 Drain A
Gate B 4
2 Drain B
(Top View)
Note: The backside of the package is the
source terminal for the transistor.
Figure 1. Pin Connections
2019 NXP B.V.
RF Device Data
NXP Semiconductors
MRF24G300HS MRF24G300H
1


NXP Semiconductors Electronic Components Datasheet

MRF24G300HS Datasheet

RF Power GaN Transistors

No Preview Available !

Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Maximum Forward Gate Current, IG (A+B), @ TC = 25C
Storage Temperature Range
Case Operating Temperature Range
Maximum Channel Temperature (1)
Table 2. Thermal Characteristics
VDSS
VGS
VDD
IGMAX
Tstg
TC
TCH
125
–8, 0
0 to +55
42
– 65 to +150
– 55 to +150
350
Vdc
Vdc
Vdc
mA
C
C
C
Characteristic
Thermal Resistance by Infrared Measurement, Active Die Surface--to--Case
Case Temperature 125C, PD = 118 W
Thermal Resistance by Finite Element Analysis, Channel--to--Case
Case Temperature 125C, PD = 118 W
Table 3. ESD Protection Characteristics
Symbol
RJC (IR)
RCHC
(FEA)
Value
0.52 (2)
0.72 (3)
Unit
C/W
C/W
Test Methodology
Human Body Model (per JS--001--2017)
Charge Device Model (per JS--002--2014)
Class
1B, passes 900 V
3, passes 1200 V
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
Off Characteristics (4)
Drain--Source Breakdown Voltage
(VGS = –8 Vdc, ID = 24.3 mAdc)
On Characteristics (4)
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 22 mAdc)
Gate--Source Leakage Current
(VDS = 0 Vdc, VGS = –5 Vdc)
V(BR)DSS
150
— Vdc
VGS(th)
IGSS
–3.8
–10.0
–3.16
–2.3
Vdc
mAdc
Table 5. Ordering Information
Device
Tape and Reel Information
Package
MRF24G300HSR5
R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel
NI--780S--4L
MRF24G300HR5
R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel
NI--780H--4L
1. Reliability tests were conducted at 225C. Operation with TCH at 350C will reduce median time to failure.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.
3. RCHC (FEA) must be used for purposes related to reliability and limitations on maximum channel temperature. MTTF may be estimated by
the expression MTTF (hours) = 10[A + B/(T + 273)], where T is the channel temperature in degrees Celsius, A = –10.3 and B = 8263.
4. Each side of device measured separately.
MRF24G300HS MRF24G300H
2
RF Device Data
NXP Semiconductors


Part Number MRF24G300HS
Description RF Power GaN Transistors
Maker NXP
PDF Download

MRF24G300HS Datasheet PDF






Similar Datasheet

1 MRF24G300H RF Power GaN Transistors
NXP
2 MRF24G300HS RF Power GaN Transistors
NXP





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy